Accession Number : ADD012191

Title :   Method of Preparing Single Crystalline Cubic Silicon Carbide Layers.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Addamiano,Arrigo

Report Date : 03 Dec 1985

Pagination or Media Count : 6

Abstract : This invention pertains to a method of making very pure cubic silicon carbide, SiC, comprising the steps of: loading a first inner graphite cup of a Lely type furnace while cold with a large number of crystals of SiC that are used as substrates; sealing the first cup with a graphite lid; inserting the first cup into a second graphite cup and inserting them into the furnace; filling the area between the first cup and the second cup with SiC; heating the first cup to between 2300 C. and 2700 C. until an atmosphere saturated with Si, C, SiC2 and Si2C is created; and cooling the furnace quickly to a temperature less than 1800 C.

Descriptors :   *PATENTS, *SILICON CARBIDES, *CRYSTALLIZATION, GRAPHITE, CRYSTAL CHEMISTRY, SEMICONDUCTORS, VAPOR DEPOSITION, CRYSTAL GROWTH, PRODUCTION, FURNACES, HIGH TEMPERATURE, PURITY, CODING, CRYSTALS, INVENTIONS, SUBSTRATES

Subject Categories : Inorganic Chemistry
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE