Accession Number : ADD012206
Title : Selectively Etching Microstructures in a Glow Discharge Plasma.
Descriptive Note : Patent Application,
Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON DC
Personal Author(s) : Staples,Edward J
Report Date : 17 Mar 1986
Pagination or Media Count : 12
Abstract : Selective etching of microelectronic devices comprising crystal substrates is achieved by electrically masking conductive areas thereon which are not to be etched by ionic bombardment. The electrical masking is accomplished by biasing the selected areas with a bias voltage which will repel the ions, which are attracted to all of the unbiased portions of the microelectronic device.
Descriptors : *PATENT APPLICATIONS, *ETCHING, *MICROSTRUCTURE, *GLOW DISCHARGES, *PLASMAS(PHYSICS), BIAS, CONDUCTIVITY, CRYSTALS, ELECTRICAL PROPERTIES, MASKING, MICROELECTRONICS, SUBSTRATES, VOLTAGE, ION BOMBARDMENT
Subject Categories : Mfg & Industrial Eng & Control of Product Sys
Plasma Physics and Magnetohydrodynamics
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE