Accession Number : ADD012309

Title :   Heterojunction D(-) (or A(+)) Millimeter and Submillimeter Wave Detector.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Shanabrook,Ben V ; Moore,William J

Report Date : 27 Nov 1985

Pagination or Media Count : 16

Abstract : A solid state detector for use in detecting submillimeter and millimeter for wave radiation. The solid state detector comprises a semilattice of alternating thin epitaxial layers of GaAsl and AlGaAs doped with impurities having the same conductivity type. Because of the transfer of charge carriers in order to obtain thermal equilibrium, the charge carriers in the higher energy doped layer transfer to the adjacent lower energy doped layer and form a predetermined number of either D- or + centers in this layer. This D- or A+ center formation is obtained without the use of an optical bias. The ionization energy for these D- or A+ centers is small is small enough that photons from millimeter or submillimeter wave radiation is sufficient to ionize these carriers and yield a measurable conductivity in the device.

Descriptors :   *PATENT APPLICATIONS, *EPITAXIAL GROWTH, *CONDUCTIVITY, *IONIZATION, *SOLID STATE ELECTRONICS, *SUBMILLIMETER WAVES, *CHARGE CARRIERS, *DETECTORS, BIAS, ENERGY, EQUILIBRIUM(GENERAL), HEAT, IMPURITIES, LAYERS, OPTICAL PROPERTIES, PHOTONS, RADIATION, THINNESS, TRANSFER, WAVES

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE