Accession Number : ADD012432
Title : Quantum Well Electron Barrier Diode.
Descriptive Note : Patent Application,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Kirchoefer,Steven W
Report Date : 13 Mar 1986
Pagination or Media Count : 11
Abstract : This patent application relates to electron barrier diodes, and more particularly, to an asymmetric quantum well electron barrier diode. A quantum well electron barrier diode is described which comprises a substrate, a first buffer layer on the substrate, a superlattice structure on the first buffer layer, a second buffer layer on the superlattice structure, a contacting layer on the second buffer layer and first and second ohmic contacts attached to the contacting layer and substrate respectively. The superlattice structure comprises a sequence of a plurality of high energy gap barrier layers interleaved with a plurality of low energy gap wells. The sequence is repeated until the desired thickness is reached. Current flows perpendicular to the layers.
Descriptors : *PATENT APPLICATIONS, *ELECTRIC CONTACTS, *SEMICONDUCTOR DIODES, *QUANTUM ELECTRONICS, BARRIERS, BUFFERS, CRYSTAL STRUCTURE, ELECTRONS, ENERGY GAPS, LAYERS, LOW ENERGY, SUBSTRATES, THICKNESS, ASYMMETRY, BIAS, ELECTRONIC SWITCHING
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE