Accession Number : ADD012462

Title :   Laser-Induced Chemical Vapor Deposition of Germanium and Doped-Germanium Films.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON DC

Personal Author(s) : Stanley,Ann E

Report Date : 06 Aug 1986

Pagination or Media Count : 36

Abstract : Germanium and doped-germanium polycrystalline films are formed using photolytic CO2 laser-induced chemical vapor deposition method. Germanium being transparent to IR light makes the production of high purity polycrystalline germanium and doped-germanium films from starting compounds of germane, ethylgermane diethylgermane, and triethylgermane ideally adapted to the laser induced infrared radiation provided by the tunable, continuous-wave CO2 laser which delivers infrared laser radiation in the range of 10.4 or 9.4 micrometers. The compound which produce germanium in usable quantity are germane, ethylgermane and diethylgermane. Triethylgermane produces germanium in a quantity usable as a dopant. The products identified on irradiation of germane are germanium and hydrogen. Conversion rates on the order of 86% are readily obtained. On irradiation of diethylgermane and ethylgermane, ethylene, germane, germanium and hydrogen are produced. Germanium films doped with cadmium and aluminum are successfully produced by the irradiation of germane mixtures containing dimethylcadmium or trimethylaluminum, respectively.

Descriptors :   *PATENT APPLICATIONS, *SEMICONDUCTING FILMS, *VAPOR DEPOSITION, *GERMANIUM, LASER APPLICATIONS, DOPING, POLYCRYSTALLINE, PHOTOLYSIS, CARBON DIOXIDE LASERS, INFRARED RADIATION, IRRADIATION, HYDROGEN, METHYL RADICALS, CADMIUM, ALUMINUM, VAPOR PHASES

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE