Accession Number : ADD012474
Title : Dual Channel High Electron Mobility Field Effect Transistor.
Descriptive Note : Patent Application,
Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON DC
Personal Author(s) : Iafrate,Gerald J ; Poli,Louis E ; AuCoin,Thomas R ; Heath,Linda S
Report Date : 18 Aug 1986
Pagination or Media Count : 42
Abstract : A multi-terminal Group III-V semiconductor high electron mobility field effect transistor comprised of a sandwich of molecular beam epitaxially grown layers and including two high mobility charge flow channels in respective two dimensional electron gas regions implemented, for example, by at least one doped layer of aluminum gallium arsenide adjacent an undoped gallium arsenide, layer separated by a heterojunctions. A pair of opposing two dimensional electron gas (2DEG) regions are generated in the layer of undoped gallium arsenide by the bending of the energy levels of the semiconductor materials. Charge flow occurs in a unidirectional fashion from one channel to the other in the common undoped gallium arsenide layer under the control of an electric field applied transversely through the structure by means of a top gate electrode and a bottom field plate electrode. Alternatively, the source voltage can be increased until the requisite amount of energy has been provided for the electrons to become hot enough to transfer from one channel to the other, in which cases a lower biasing contact is not required.
Descriptors : *PATENT APPLICATIONS, *SEMICONDUCTORS, *GATES(CIRCUITS), *GALLIUM ARSENIDES, ALUMINUM, CHANNELS, CHARGE TRANSFER, ELECTRIC FIELDS, ELECTRODES, ELECTRON GAS, ELECTRONS, ENERGY LEVELS, GALLIUM, LAYERS, MATERIALS, MOLECULAR BEAMS, SANDWICH CONSTRUCTION, SOURCES, TWO DIMENSIONAL, VOLTAGE
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE