Accession Number : ADD012571

Title :   Liquid Phase Epitaxy (LPE) of Silicon Carbide.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Addamiano,Arrigo

Report Date : 30 Sep 1986

Pagination or Media Count : 5

Abstract : A method for making cubic SiC devices is described in this patent. The method comprises steps of preparing a preform consisting of high purity Si on which a layer of cubic SiC has been deposited by CVD; transferring the preform to a furnace containing a molten bath of Si saturated with SiC at a temperature of between 1600-1800C., the saturation being insured by the use of a high purity graphite crucible for the Si; dipping the Si-SiC preform into the molten bath and allowing deposition of more cubic SiC on the SiC layer by reducing the temperature of the already formed cubic SiC layer from the preparing step in relation to the rest of the molten bath.

Descriptors :   *PATENTS, *SEMICONDUCTOR JUNCTIONS, *EPITAXIAL GROWTH, *SILICON CARBIDES, DEPOSITION, CRUCIBLES, BATHS, MELTS, FURNACES, LIQUID PHASES, VAPOR DEPOSITION, DOPING

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE