Accession Number : ADD012731
Title : Microwave and Millimeter Wave Phase Shifter.
Descriptive Note : Patent,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Neidert,Robert E ; Krowne,Clifford M
Report Date : 16 Dec 1986
Pagination or Media Count : 10
Abstract : A variable phase shifter based on the slow-wave effect for operation in the millimeter wave region, comprising a GaAs substrate for mechanical support; an n+ doped semiconductor layer disposed on the GaAs substrate for operation as a first ground plane; an n doped semiconductor layer disposed on the n+ semiconductor layer with a thickness to permit only one mode at millimeter wave frequencies to propagate, while suppressing higher order millimeter wave modes; and a Schottky metal microstrip with first and second ends disposed on top or the n doped semiconductor layer. Means are provided in the form of ohmic contacts for electrically connecting the n+ semiconductor layer to ground electrical potential. These ohmic contacts are disposed on top of the n doped layer, but are provided with a very large surface area contact to the n doped layer in order to significantly reduce the resistance between the ohmic contact and to the n+ semiconductor layer. Means are included for providing an electrical bias voltage between the Schottky metal microstrip and the n+ doped layer. The propagating phase velocity of millimeter waves propagating alone the Schottky metal microstrip can be varied in accordance with the bias voltage to obtain a desired phase shift between the first and second ends of the metal microstrip. (PATENTS).
Descriptors : *PATENTS, *GALLIUM ARSENIDES, *SEMICONDUCTORS, *PHASE SHIFT CIRCUITS, BIAS, ELECTRIC CONTACTS, ELECTRICAL GROUNDING, FREQUENCY, LAYERS, MECHANICAL PROPERTIES, METALS, MILLIMETER WAVES, PHASE, PHASE SHIFT, PROPAGATION, SCHOTTKY BARRIER DEVICES, SEMICONDUCTORS, STRIP TRANSMISSION LINES, SUBSTRATES, THICKNESS, VARIABLES, VELOCITY, VOLTAGE
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE