Accession Number : ADD012776

Title :   Method of Making Planar Geometry Schottky Diode Using Oblique Evaporation and Normal Incidence Proton Bombardment.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Papanicolaou,Nicolas A

Report Date : 03 Feb 1987

Pagination or Media Count : 5

Abstract : This patent discloses a Schottky diode and method of making same in which a n+ doped layer, an n doped layer and an undoped layer of a semi-insulating material selected from the group consisting of gallium arsenide, aluminum gallium arsenide and indium phosphide is grown consecutively on a semi-insulating substrate made of the same material. A mesa with acute angled sides is etched on the undoped layer to such a depth that the n doped layer is exposed. A Schottky and ohmic contact are then deposited on opposite sides of the mesa. The exposed n layer is then bombarded with protons at normal incidence.

Descriptors :   *PATENTS, *PROTON BOMBARDMENT, *SCHOTTKY BARRIER DEVICES, ALUMINUM GALLIUM ARSENIDE, GALLIUM ARSENIDES, ELECTRIC CONTACTS, INSULATION, MATERIALS, LAYERS, EXPOSURE(GENERAL), LAYERS, INDIUM PHOSPHIDES, EVAPORATION, GEOMETRIC FORMS, PLANAR STRUCTURES, SUBSTRATES, SEMICONDUCTOR DIODES

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics
      Mfg & Industrial Eng & Control of Product Sys

Distribution Statement : APPROVED FOR PUBLIC RELEASE