Accession Number : ADD012801

Title :   Photoionization Technique for Growth of Metallic Films.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s) : Eden,James G ; Geohegan,David B

Report Date : 10 Mar 1987

Pagination or Media Count : 14

Abstract : A novel method and system for depositing films of selected metallic or semiconductor materials, and particularly of the group III, IV, and V elements is described which comprises heating a halide compound of the material to produce vapor within a substantially closed chamber, irradiating the vapor with light of preselected wavelength to dissociatively photoionize the vapor into the constituent positive ions of the material and negative halogen ions, and subjecting the photoionized vapor to an electric field to selectively remove the positive ions of the material for plating as a film.

Descriptors :   *PATENTS, *METAL FILMS, ANIONS, CATIONS, CLOSED ECOLOGICAL SYSTEMS, ELECTRIC FIELDS, GROWTH(GENERAL), HALIDES, HALOGENS, METALS, PHOTOIONIZATION, PLATING, SEMICONDUCTORS

Subject Categories : Metallurgy and Metallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE