Accession Number : ADD012807

Title :   Modulation Doped GaAs/AlGaAs Field Effect Transistor.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s) : Das,Mukunda B ; Norris,George B ; Grzyb,Joseph A

Report Date : 24 Mar 1987

Pagination or Media Count : 10

Abstract : To realize a depletion mode modulation doped field effect transistor with high gate length to depletion-depth ratio that is capable of providing high power gain at millimeter wave frequencies, an ohmic gate or a heterojunction gate is used on the n-ALGaAs/GaAs layered structure, replacing the prior art Schottky-barrie metal gate. The depletion mode operation is desirable for analog signal amplifying circuits as opposed to the enhancement-mode device commonly used for switching or digital circuits. In the case of Schottky barrier gate, high aspect ratio structures naturally operate in the enhancement mode, hence the need for the change in the gate electrode structure. (Patents)

Descriptors :   *PATENTS, *FIELD EFFECT TRANSISTORS, *SCHOTTKY BARRIER DEVICES, AMPLIFICATION, ANALOG SIGNALS, ASPECT RATIO, CIRCUITS, DEPLETION, DIGITAL SYSTEMS, ELECTRODES, FREQUENCY, GATES(CIRCUITS), HETEROJUNCTIONS, HIGH GAIN, HIGH POWER, HIGH RATE, LENGTH, MILLIMETER WAVES, OPERATION, OPTIMIZATION, STRUCTURES

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE