Accession Number : ADD012813

Title :   CCD Gate Definition Process.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s) : Bluzer,Nathan ; Halvis,James

Report Date : 24 Mar 1987

Pagination or Media Count : 5

Abstract : This patent discloses a Charge Coupled Device gate definition process utilizing a thin film layer in a double masking process to form a first and second oxide layer over the polysilicon gate material to provide a profiled and tapered oxide layer over the gate without any reentrant oxide steps.

Descriptors :   *PATENTS, *CHARGE COUPLED DEVICES, *MASKING, *GATES(CIRCUITS), *POLYSILICONS, LAYERS, MATERIALS, OXIDES, TAPER, THIN FILMS, THINNESS

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics
      Mfg & Industrial Eng & Control of Product Sys

Distribution Statement : APPROVED FOR PUBLIC RELEASE