Accession Number : ADD012818

Title :   Buried Metallic Layer Formed by ION Implantation Specification.

Descriptive Note : Patent Application,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Campisi,George J

Report Date : 13 Mar 1987

Pagination or Media Count : 11

Abstract : A first object of the invention is to provide an efficient economic method of forming a buried metal layer in a semiconductor substrate. A second object is to provide a strain free metal layer, covered by a strain free silicon layer. A third object is to provide a method of forming temperature stable, low diffusivity silicides in a semi-conductor substrate. A fourth object is to provide faster circuitry capable of handling higher current loads due to buried interconnections and shorter interconnection paths. A fifth object is to provide flexibility in integrated circuit design by having variable depth layers; depth being dependent on ion acceleration energies and control of layer placements. A sixth object is to provide epitaxial-like metal growth within a silicon substrate.

Descriptors :   *PATENT APPLICATIONS, *ION IMPLANTATION, *METALS, *SEMICONDUCTORS, BURIED OBJECTS, CIRCUIT INTERCONNECTIONS, CIRCUITS, CONTROL, DEPTH, ECONOMICS, EFFICIENCY, EMPLACEMENT, ENERGY, EXPERIMENTAL DESIGN, INTEGRATED CIRCUITS, ION ACCELERATORS, LAYERS, PATHS, SILICON, SPECIFICATIONS, SUBSTRATES, VARIABLES

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE