Accession Number : ADD012877

Title :   Process for Improving the Quality of Epitaxial Silicon Films Grown on Insulating Substrates Utilizing Oxygen Ion Conductor Substrates.

Descriptive Note : Patent,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s) : Manasevit,Harold M

Report Date : 28 Apr 1987

Pagination or Media Count : 7

Abstract : The present invention accomplishes the thermal oxidation of the silicon side of the interface present in epitaxial silicon films grown on yttria-stabilized cubic zirconia, to form a dual-layer structure of Silicon/amorphous Silicon dioxide /Yttria Stabilized Zirconium. The films are formed in either dry oxygen (at 1100 C.) or in pyrogenic steam (at 925 C.) by the rapid diffusion of oxidizing species through a 425 um thick cubic zirconia substrate. For instance a 0.17 um thick SiO2 layer is obtained after 100 min in pyrogenic steam at 925 C. This relatively easy transport of oxidants is unique to YSZ and other insulators which are also superionic oxygen conductors, and cannot be achieved in other existing Si/insulator systems, such as silicon-on-sapphire.

Descriptors :   *PATENTS, *EPITAXIAL GROWTH, *FILMS, *SILICON, DRY MATERIALS, OXYGEN, INSULATION, SUBSTRATES, DIFFUSION, OXIDATION, THERMOCHEMISTRY, OXIDIZERS, TRANSPORT, SILICON DIOXIDE, SEMICONDUCTING FILMS, SUBSTRATES, ZIRCONIUM, YTTRIUM, INTEGRATED CIRCUITS, VAPOR DEPOSITION

Subject Categories : Solid State Physics
      Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE