Accession Number : ADD013060
Title : Permeable Base Transistor Structure.
Descriptive Note : Patent, Filed 23 Aug 82, patented 22 Jan 85,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Yoder,Max N
Report Date : 22 Jan 1985
Pagination or Media Count : 5
Abstract : The performance of the conventional permeable base transistor (PBT) is improved by configuring its structure so as to eliminate excessive parasitic loses above and below its control grid stucture, to eliminate excessive negative feedback in its source-grid (gate) region, and to eliminate the requirement for backfill of the trenches over the control grid structure. The improved PBT structure features, inter alia, a collector/anode/- drain structure comprising a plurality of Schottky metal contacts, and the aforementioned control grid structure comprising a plurality of Schottky metal control grid elements. Each of the plurality of Schottky metal control grid elements, after fabrication, is shaped like an inverted upper case letter T emplaced in corresponding ones of a plurality of trenches of the improved PBT structure.
Descriptors : *PATENTS, *TRANSISTORS, *CONTROL SYSTEMS, *GRIDS, *METAL CONTACTS, *SCHOTTKY BARRIER DEVICES, BACKFILLS, TRENCHES, FEEDBACK, CONTROL, DRAINAGE
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE