Accession Number : ADD013123

Title :   High Frequency, High Voltage MOSFET Isolation Amplifier.

Descriptive Note : Patent, Filed 3 Jun 86, patented 19 May 87,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s) : Jones,Franklin B ; Milberger,Walter E

Report Date : 19 May 1987

Pagination or Media Count : 13

Abstract : A MOSFET isolation amplifier apparatus to allow stable high frequency linear operation of MOSFET power stages and to provide precise regulation of a load current through a magnetic yoke load. Variations of transfer characteristics and input parameters in the MOSFET power stages are corrected by use of a feedback signal which is generated in a current sense resistor by the load current. Such a power stage allows the implementation of isolation amplifiers which can provide high power high frequency linear regulation at elevated voltages and currents. (Patents)

Descriptors :   *PATENTS, *POWER AMPLIFIERS, *METAL OXIDE SEMICONDUCTORS, *TRANSISTOR AMPLIFIERS, *FIELD EFFECT TRANSISTORS, ELECTRICAL LOADS, ISOLATION, ELECTRIC CURRENT, CORRECTIONS, TRANSIENTS, FEEDBACK, ATTENUATORS, SIGNALS, TRANSCONDUCTANCE, HIGH VOLTAGE, MICROWAVES, INPUT, PARAMETERS, HIGH FREQUENCY, POWER EQUIPMENT, DRIVES(ELECTRONICS)

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE