Accession Number : ADD013206

Title :   Internal Photolysis Reactor.

Descriptive Note : Patent, Filed 13 Sep 82, patented 19 Jun 84,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Walsh, Peter J ; Bottka, Nicholas

Report Date : 19 Jun 1984

Pagination or Media Count : 7

Abstract : This patent discusses a method and apparatus which permits photolysis of compounds without use of windows to permit unlimited growth of epitaxial layers. Epitaxial layers can include growth of crystals such as iron. A two section reactor chamber with a common opening between the sections is used for the internal production of high energy ultra-violet light to carry out the photolysis. The first section of the reactor chamber containing the substrate to be coated is connected is connected to a source of molecular compound vapor capable of undergoing a photolytic change. A feed system provides a rare gas flow through the second section at low pressure past an electrode discharge system to produce ultraviolet light. The ultraviolet light passes through the opening between the sections and interacts with the molecular compound causing photolytic decomposition of the molecular compound and decomposition of the desired epitaxial layer on the substrate. Upon exiting the reactor chamber, the molecular compound used for the photolysis is recaptured via a cold trap while a residual gas analyzer permits the exhaust cycle in the reactor chamber to either be vented or recycled depending on the level of purity of the rare gas.

Descriptors :   *PATENTS, THIN FILMS, EPITAXIAL GROWTH, PHOTOLYSIS

Subject Categories : Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE