Accession Number : ADD013208

Title :   Normally off InP Field Effect Transistor Making Process.

Descriptive Note : Patent, Filed 30 Mar 81, patented 8 Feb 83,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Collins, David A ; Lile, Derek L

Report Date : 08 Feb 1983

Pagination or Media Count : 5

Abstract : A normally off insulated gate field effect transistor having a p-type single crystal InP substrate with source and drain contracts spaced apart and disposed thereon with a layer of silicon dioxide disposed over the InP material in the space between the contacts and a gate electrode disposed on the silicon dioxide to completely bridge the space between the contacts. The p-type single crystal InP substrate may be replaced by a p-type epitaxial InP material disposed on a semi-insulating InP substrate.

Descriptors :   *PATENTS, *FIELD EFFECT TRANSISTORS, P TYPE SEMICONDUCTORS, INDIUM PHOSPHIDES

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE