Accession Number : ADD013208
Title : Normally off InP Field Effect Transistor Making Process.
Descriptive Note : Patent, Filed 30 Mar 81, patented 8 Feb 83,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Collins, David A ; Lile, Derek L
Report Date : 08 Feb 1983
Pagination or Media Count : 5
Abstract : A normally off insulated gate field effect transistor having a p-type single crystal InP substrate with source and drain contracts spaced apart and disposed thereon with a layer of silicon dioxide disposed over the InP material in the space between the contacts and a gate electrode disposed on the silicon dioxide to completely bridge the space between the contacts. The p-type single crystal InP substrate may be replaced by a p-type epitaxial InP material disposed on a semi-insulating InP substrate.
Descriptors : *PATENTS, *FIELD EFFECT TRANSISTORS, P TYPE SEMICONDUCTORS, INDIUM PHOSPHIDES
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE