Accession Number : ADD013245

Title :   Method of Forming Thermally Stable High Resistivity Regions in N-Type Indium Phosphide by Oxygen Implantation.

Descriptive Note : Patent, Filed 12 Dec 85, patented 16 Jun 87,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Thompson, Phillip E ; Dietrich, Harry B

Report Date : 16 Jun 1987

Pagination or Media Count : 6

Abstract : This invention relates generally to the formation of electrical isolation regions in semiconductive structures and more particularly to thermally stable isolation regions in n-type indium phosphide substrates by oxygen implantation. The necessity for selectively forming electrically isolated regions in certain types of semiconductive structures, such as monolithic integrated circuits is generally well-known. In the absence of providing some type of electrically insulating barrier between closely spaced semiconductive devices and/or other IC components fabricated in a common semiconductive substrate, undesirable leakage currents will flow between these devices or components and degrade the electrical performance of the structure, if not render it totally inoperable.

Descriptors :   *PATENTS, *CIRCUIT BOARDS, *ELECTRICAL INSULATION, *WAFERS, *N TYPE SEMICONDUCTORS, ELECTRICAL CONDUCTIVITY, OXYGEN, IMPLANTATION, INDIUM PHOSPHIDES, SUBSTRATES

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE