Accession Number : ADD013245
Title : Method of Forming Thermally Stable High Resistivity Regions in N-Type Indium Phosphide by Oxygen Implantation.
Descriptive Note : Patent, Filed 12 Dec 85, patented 16 Jun 87,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Thompson, Phillip E ; Dietrich, Harry B
Report Date : 16 Jun 1987
Pagination or Media Count : 6
Abstract : This invention relates generally to the formation of electrical isolation regions in semiconductive structures and more particularly to thermally stable isolation regions in n-type indium phosphide substrates by oxygen implantation. The necessity for selectively forming electrically isolated regions in certain types of semiconductive structures, such as monolithic integrated circuits is generally well-known. In the absence of providing some type of electrically insulating barrier between closely spaced semiconductive devices and/or other IC components fabricated in a common semiconductive substrate, undesirable leakage currents will flow between these devices or components and degrade the electrical performance of the structure, if not render it totally inoperable.
Descriptors : *PATENTS, *CIRCUIT BOARDS, *ELECTRICAL INSULATION, *WAFERS, *N TYPE SEMICONDUCTORS, ELECTRICAL CONDUCTIVITY, OXYGEN, IMPLANTATION, INDIUM PHOSPHIDES, SUBSTRATES
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE