Accession Number : ADD013299

Title :   Method of Preparing a Thin-Film, Single-Crystal Photovoltaic Detector.

Descriptive Note : Patent, Filed 28 Feb 79, patented 26 Jan 82,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Schoolar, Richard B

Report Date : 26 Jan 1982

Pagination or Media Count : 13

Abstract : A thin-film single-crystal infrared detector exhibiting and increased frequency of response. A closed transverse junction, formed by diffusing a central electrode of an impurity rich metal into a lead-salt film epitaxially grown on an insulating substrate, provides an effective optical area in excess of the junction surface. An ohmic contact is spaced apart from the central electrode. Junction capacitance, a limitation upon the electrical response, is diminished by the detector geometry while detectivity is enhanced. In an alternative embodiment the detector may be segmented to provide directional detection.

Descriptors :   *PATENTS, *PHOTOVOLTAIC EFFECT, *SINGLE CRYSTALS, *INFRARED DETECTORS, *THIN FILMS, ELECTRODES, DETECTION, DIRECTIONAL, FREQUENCY RESPONSE, CAPACITANCE, JUNCTIONS, ELECTRIC CONTACTS, DETECTORS, TRANSVERSE, ELECTRICAL PROPERTIES, RESPONSE, INSULATION, SUBSTRATES, SURFACES, OPTICAL PROPERTIES, SINGLE CRYSTALS

Subject Categories : Optical Detection and Detectors
      Electrooptical and Optoelectronic Devices
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE