Accession Number : ADD013343
Title : Direct Moat Self-Aligned Field Oxide Technique.
Descriptive Note : Patent, Filed 21 Oct 85, patented 11 Aug 87,
Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC
Personal Author(s) : Cricchi, James R ; Blaha, Franklin C
Report Date : 11 Aug 1987
Pagination or Media Count : 5
Abstract : The process of the present invention produces CMOS bulk circuits allowing any treatment of the field oxide up to and including the channel edge; allows p-field boron implant to increase parasitic threshold eliminates the bird's beak oxide encroachment which reduces channel width and recessed oxide along the channel edge; provides for a self-aligned p-field implant; and provides for a spacer use on a self-aligned p-field implant to offset effects of side diffusion and oxide undercut.
Descriptors : *PATENTS, *COMPLEMENTARY METAL OXIDE SEMICONDUCTORS, INTEGRATED CIRCUITS, P TYPE SEMICONDUCTORS, BORON, WIDTH, ALIGNMENT, CHANNELS, DIFFUSION, EDGES, OXIDES, SPACERS, THRESHOLD EFFECTS
Subject Categories : Solid State Physics
Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE