Accession Number : ADD013442
Title : Method for Etch Thinning Silicon Devices.
Descriptive Note : Patent, Filed 26 Sep 80, patented 8 Feb 83,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Gigante, Joseph R
Report Date : 08 Feb 1983
Pagination or Media Count : 5
Abstract : An improved method for etch-thinning silicon devices using three sequential etches. The device is pre-thinned in a hot KOH-H2O etch. The thinning etch is a hydrofluoric, nitric, acetic acids (1:3:10) and a precise amount of hydrogen peroxide mixture. The cleanup etch is a potassium permanganate, hydrofluoric and acetic acids mixture. The result is a repeatedly specular, smooth, uniform, 10 micron thick membrane over the pixels with a p+ surface to enhance the CCI optical response.
Descriptors : *SILICON, *ETCHING, *PATENTS, ACETIC ACID, ACIDS, MIXTURES, HYDROGEN PEROXIDE, PERMANGANATES, POTASSIUM COMPOUNDS, CLEANING, OPTICAL PROPERTIES, RESPONSE
Subject Categories : Inorganic Chemistry
Distribution Statement : APPROVED FOR PUBLIC RELEASE