Accession Number : ADD013442

Title :   Method for Etch Thinning Silicon Devices.

Descriptive Note : Patent, Filed 26 Sep 80, patented 8 Feb 83,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Gigante, Joseph R

Report Date : 08 Feb 1983

Pagination or Media Count : 5

Abstract : An improved method for etch-thinning silicon devices using three sequential etches. The device is pre-thinned in a hot KOH-H2O etch. The thinning etch is a hydrofluoric, nitric, acetic acids (1:3:10) and a precise amount of hydrogen peroxide mixture. The cleanup etch is a potassium permanganate, hydrofluoric and acetic acids mixture. The result is a repeatedly specular, smooth, uniform, 10 micron thick membrane over the pixels with a p+ surface to enhance the CCI optical response.

Descriptors :   *SILICON, *ETCHING, *PATENTS, ACETIC ACID, ACIDS, MIXTURES, HYDROGEN PEROXIDE, PERMANGANATES, POTASSIUM COMPOUNDS, CLEANING, OPTICAL PROPERTIES, RESPONSE

Subject Categories : Inorganic Chemistry

Distribution Statement : APPROVED FOR PUBLIC RELEASE