Accession Number : ADD013467
Title : Thermally-Activated Vapor Etchant for INP.
Descriptive Note : Patent, Filed 18 Nov 85, patented 9 Jun 87,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Clawson, Arthur R
Report Date : 09 Jun 1987
Pagination or Media Count : 15
Abstract : This patent discusses vapor from liquid ethylene dibromide (EDB) functions in manner superior to anhydrous HCI for in situ gas phase etching of InP substrates in Metalorganic Vapor Phased Epitaxy (MOVPE). The etch rate and surface morphology behaviors have been determined for conditions useful as a substrate cleaning step prior to growth of InP and InGaAs epilayers. The thermally activated decomposition and etching are analogous to group III-V semiconductor growth processes; the behavior in different carrier gas mixtures demonstrates dependence on gas phase reactions in the heated vapor above the substrate.
Descriptors : *ETCHING, *ORGANOMETALLIC COMPOUNDS, *SUBSTRATES, *PATENTS, ACTIVATION, BEHAVIOR, CLEANING, DECOMPOSITION, GASES, HEAT, MIXTURES, MORPHOLOGY, RATES, SURFACE PROPERTIES, VAPOR PHASES, VAPORS
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE