Accession Number : ADD013470
Title : Graded Gap Semiconductor Optical Device.
Descriptive Note : Patent, Filed 25 Apr 80, patented 1 Feb 83,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Jensen, James D ; Schoolar, Richard B
Report Date : 01 Feb 1983
Pagination or Media Count : 20
Abstract : This patent discusses a variable temperature method for the preparation of single and multiple epitaxial layers of single-phase (e.g., face-centered cubic), ternary lead chalcogenide alloys (e.g., lead cadmium sulfide Pb1-wCdwaS1-a wherein w varies between zero and fifteen hundredths, inclusive, and a =0.500 + or - 0.003), deposited upon substrates of barium fluoride, BaF2, maintained in near thermodynamic equilibrium with concurrently sublimated lead alloy and chalcogenide sources. During preparation, the temperature of the substrate is varied, thereby providing an epilayer with graded composition and predetermined electrical and optical properties along the direction of growth. This growth technique can be used to produce infrared lenses, narrowband detectors, and double heterojunction lasers.
Descriptors : *CHALCOGENS, *EPITAXIAL GROWTH, *HETEROJUNCTIONS, *INFRARED OPTICAL MATERIALS, *OPTICAL PROPERTIES, *PATENTS, BARIUM HALIDES, DETECTORS, ELECTRICAL PROPERTIES, EQUILIBRIUM(GENERAL), FLUORIDES, GROWTH(GENERAL), LASERS, LAYERS, LEAD ALLOYS, LENSES, NARROWBAND, SOURCES, SUBSTRATES, TEMPERATURE, TERNARY COMPOUNDS, THERMODYNAMICS, VARIABLES
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE