Accession Number : ADD013486

Title :   Patterning Optical and X-Ray Masks for Integrated Circuit Fabrication.

Descriptive Note : Patent Application, Filed 14 Dec 87,

Corporate Author : DEPARTMENT OF THE ARMY WASHINGTON DC

Personal Author(s) : Glendinning, William B

Report Date : 14 Dec 1987

Pagination or Media Count : 15

Abstract : A layer of metal is deposited on a mask substrate and then covered with a layer of positive electron resist. A delineation of the peripheral boundaries of the desired mask geometry is carried out by means of a direct-write electron beam. Development and etching steps serve to remove the positive resist and the underlying metal in the beam-exposed peripheral boundaries. The mask is then raster scanned with a low intensity beam until a boundary is detected and then the beam intensity is increased significantly to a level sufficient to expose the positive resist. The scan and exposure continue until the mating peripheral boundary is detected and then the beam is rapidly decreased in intensity to its former low intensity level. The substrate is next developed to remove the positive resist subjected to the increased exposure-level beam intensity; and, the metal underlying this positive resist is then etched away. A final removal step serves to remove the remaining positive resist covering the substrate area outside of the geometry(s) circumscribed or delineated by said peripheral boundaries.

Descriptors :   *FABRICATION, *INTEGRATED CIRCUITS, *MASKS, BOUNDARIES, ELECTRON BEAMS, ELECTRONS, ETCHING, GEOMETRY, INTENSITY, LAYERS, LOW INTENSITY, LOW LEVEL, METALS, OPTICAL EQUIPMENT, RASTERS, REMOVAL, SUBSTRATES, WRITING, X RAYS, BOUNDARIES, ELECTRON BEAMS, ELECTRONS

Subject Categories : Mfg & Industrial Eng & Control of Product Sys

Distribution Statement : APPROVED FOR PUBLIC RELEASE