Accession Number : ADD013492

Title :   Yoked, Orthogonally Distributed Equal Reactance Amplifier.

Descriptive Note : Patent Application, Filed 27 Aug 87,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Yoder, Max N

Report Date : 27 Aug 1987

Pagination or Media Count : 17

Abstract : A field effect transistor device especially useful in common gate amplifier circuits for use with millimeter wave and microwave signals. By forming the device in a unitary monolith, and by making the device's source to gate and drain to gate geometry identical, the input and output portions of the device are symmetric and impedance matched, increasing the device power handling capacity. The device's source and drain contain heavily doped regions which operate to increase the device's upper frequency range, and also act as inherent channel end stops. In several embodiments, plural such devices are yoked together integrally source to drain, eliminating common structures of adjacent stages, simplifying the devices and its fabrication, and permitting traveling wave amplification.

Descriptors :   *AMPLIFIERS, *FIELD EFFECT TRANSISTORS, *GATES(CIRCUITS), *TRAVELING WAVES, *PATENT APPLICATIONS, AMPLIFICATION, CAPACITY(QUANTITY), CIRCUITS, DISTRIBUTED AMPLIFIERS, DOPING, DRAINAGE, FIELD EQUIPMENT, FREQUENCY, GEOMETRY, HANDLING, MICROWAVES, MILLIMETER WAVES, POWER, REACTANCE, REGIONS, SIGNALS, SOURCES, STRUCTURES

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE