Accession Number : ADD013493

Title :   High Power Diamond Traveling Wave Amplifier.

Descriptive Note : Patent Application, Filed 25 Sep 87,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Yoder, Max N

Report Date : 23 Sep 1987

Pagination or Media Count : 36

Abstract : An FET device especially useful in common gate amplifier circuits used as amplifiers of microwave and millimeter wave signals. The device has a diamond film layer constituting the device's channel. Device geometry is selected so that, in common gate amplifier circuit, device input and output are impedance matched to avoid phase cancellation between input and output. In one embodiment a boron nitride layer is disposed heteroepitaxially with the diamond channel and separating the channel from the gate. In another embodiment plural such devices are yoked together integrally source to drain in such a manner that charge carriers entering the second and subsequent stages do so at maximum velocity without the need to accelerate from zero to low velocity. The resulting device has a higher power handling capacity, upper frequency range, and dynamic range.

Descriptors :   *AMPLIFIERS, *BORON NITRIDES, *DIAMONDS, *FIELD EFFECT TRANSISTORS, *FILMS, *GATES(CIRCUITS), *PATENT APPLICATIONS, CANCELLATION, CAPACITY(QUANTITY), CHANNELS, CHARGE CARRIERS, CIRCUITS, DRAINAGE, DYNAMIC RANGE, FREQUENCY, HANDLING, HIGH POWER, LAYERS, MICROWAVES, MILLIMETER WAVES, SIGNALS, SOURCES, VELOCITY

Subject Categories : Electrical and Electronic Equipment
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE