Accession Number : ADD013522
Title : Diallyl Telluride and Synthesis of Diorgano Tellurides.
Descriptive Note : Patent Application, Filed 26 Jun 87,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Harrid, Caniel C ; Higa, Kelvin T
Report Date : 26 Jun 1987
Pagination or Media Count : 13
Abstract : A new, symmetrical dialkyl telluride compound has been synthesized and found to be useful as a tellurium source compound in the Metal Organic Chemical Vapor Deposition film growth process. The procedure for preparing other diorgano tellurides. The new compound and other diorgano telluride compounds are prepared from alkali metal tellurides obtained by an efficient reaction between an alkali metal and tellurium in a naphthalene/tetrahydrofuran solution. An alkali metal telluride then reacts with an organo halide to form a final product which is isolated by filtration followed by vacuum distillation. An object of this invention is the new compound diallyl telluride. Another object of this invention is an efficient, high yield process for preparing diallyl telluride and other symmetrical as well as non-symmetrical diorgano telluride compounds. A further object of this invention is a synthesis of diorgano tellurides from alkali metal telluride compounds obtained by an efficient reaction between an alkali metal and tellurium.
Descriptors : *TELLURIDES, *ORGANIC COMPOUNDS, *SYNTHESIS(CHEMISTRY), *VAPOR DEPOSITION, *PATENT APPLICATIONS, ALKALI METAL COMPOUNDS, ALKALI METALS, EFFICIENCY, FILTRATION, FURANS, HIGH RATE, HYDROXYL RADICALS, ISOLATION, NAPHTHALENES, TELLURIUM, VACUUM DISTILLATION, MERCURY COMPOUNDS, CADMIUM TELLURIDES, SEMICONDUCTING FILMS
Subject Categories : Organic Chemistry
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE