Accession Number : ADD013523
Title : Preparation of Ditertiarybutyltelluride.
Descriptive Note : Patent Application, Filed 21 Dec 87,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Higa, Kelvin T
Report Date : 21 Dec 1987
Pagination or Media Count : 6
Abstract : Ditertiarybutyltelluride is one of the best tellurium source compounds for the low temperature organometallic chemical vapor deposition of epitaxial films of mercury cadmium telluride. The known method of preparing ditertiarybutyltelluride is an inefficient, low yield process. Ditertiarybutyltelluride can be prepared in high yield by the reaction of tellurium tetrachloride and tertiarybutyllithium in tetrahydrofuran. The final product is isolated via vacuum distillation. An object of this invention is an efficient, high yield process for the preparation of ditertiarybutyltelluride as well as other diorganotelluride compounds.
Descriptors : *TELLURIDES, *SYNTHESIS(CHEMISTRY), *BUTYL RADICALS, *PATENT APPLICATIONS, CADMIUM TELLURIDES, CHEMICAL REACTIONS, EPITAXIAL GROWTH, FURANS, HIGH RATE, HYDROXYL RADICALS, LOW LEVEL, LOW TEMPERATURE, MERCURY COMPOUNDS, TELLURIUM COMPOUNDS, VACUUM DISTILLATION, VAPOR DEPOSITION, ORGANOMETALLIC COMPOUNDS, SEMICONDUCTING FILMS
Subject Categories : Organic Chemistry
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE