Accession Number : ADD013622

Title :   Method for Making Germanium/Gallium Arsenide High Mobility Complementary Logic Transistors.

Descriptive Note : Patent, Filed 20 May 85, patented 1 Dec 87,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Yoder, Max N ; Wright, George B

Report Date : 01 Dec 1987

Pagination or Media Count : 8

Abstract : The present invention relates to complementary logic field effect transistors having high electron and hole mobility and above to maintain transistor action at cryogenic temperatures. In one embodiment germanium material is deposited upon a gallium arsenide substrate and high hole concentration areas and high electron concentration areas are created in the germanium layer. In another embodiment a germanium substrate is provided and a gallium arsenide layer is grown upon the germanium substrate with appropriate high hole concentration areas and high electron concentration areas being created within the gallium arsenide.

Descriptors :   *GALLIUM ARSENIDES, *GERMANIUM, *TRANSISTORS, *PATENTS, CONCENTRATION(COMPOSITION), CRYOGENICS, ELECTRONS, HIGH RATE, LAYERS, LOW TEMPERATURE, MATERIALS, SUBSTRATES

Subject Categories : Solid State Physics
      Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE