Accession Number : ADD013633
Title : Generation of Ohmic Contacts on Indium Phosphide.
Descriptive Note : Patent, Filed 28 Jan 86, patented 5 May 87,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Collins, David A ; Lile, Derek L
Report Date : 05 May 1987
Pagination or Media Count : 6
Abstract : A process for forming low resistance ohmic contacts on indium phosphide (InP) avoids the usual problem of high temperature annealing. The method comprises passing a current between two contacts of a suitably chosen metallic conductor that is doped so as to be the same conductivity type as the underlining semiconductor. Passage of the current causes the contacts to combine with the semiconductor via field assisted thermal diffusion.
Descriptors : *CONDUCTIVITY, *ELECTRIC CONTACTS, *INDIUM PHOSPHIDES, *PATENTS, ANNEALING, HIGH TEMPERATURE, THERMAL DIFFUSION
Subject Categories : Solid State Physics
Electrical and Electronic Equipment
Electricity and Magnetism
Distribution Statement : APPROVED FOR PUBLIC RELEASE