Accession Number : ADD013638
Title : An Article Consisting of a Silicon Carbide Layer on a High Resistivity Substrate and a Process for Making Such Article.
Descriptive Note : Patent Application, Filed 28 Dec 87,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Molnar, Bela
Report Date : 28 Dec 1987
Pagination or Media Count : 16
Abstract : An article comprised of the combination of a SiC semiconductor layer on a high-resistivity, poly-crystalline silicon substrate, as well as a method for making such article, is disclosed. The method for making such article comprises the steps of: depositing a layer of SiC on a Si substrate; depositing a layer of high-resistivity, polycrystalline silicon on a free surface of the SiC layer; protecting the layer of poly-crystalline silicon with a masking material; removing the Si substrate, thereby leaving the layer of poly-crystalline silicon as the surrogate substrate of the SiC layer; and removing the masking material.
Descriptors : *POLYCRYSTALLINE, *SEMICONDUCTORS, *SILICON CARBIDES, LAYERS, MASKING, MATERIALS, RESISTANCE, SILICON, SUBSTRATES
Subject Categories : Inorganic Chemistry
Distribution Statement : APPROVED FOR PUBLIC RELEASE