Accession Number : ADD013638

Title :   An Article Consisting of a Silicon Carbide Layer on a High Resistivity Substrate and a Process for Making Such Article.

Descriptive Note : Patent Application, Filed 28 Dec 87,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Molnar, Bela

Report Date : 28 Dec 1987

Pagination or Media Count : 16

Abstract : An article comprised of the combination of a SiC semiconductor layer on a high-resistivity, poly-crystalline silicon substrate, as well as a method for making such article, is disclosed. The method for making such article comprises the steps of: depositing a layer of SiC on a Si substrate; depositing a layer of high-resistivity, polycrystalline silicon on a free surface of the SiC layer; protecting the layer of poly-crystalline silicon with a masking material; removing the Si substrate, thereby leaving the layer of poly-crystalline silicon as the surrogate substrate of the SiC layer; and removing the masking material.

Descriptors :   *POLYCRYSTALLINE, *SEMICONDUCTORS, *SILICON CARBIDES, LAYERS, MASKING, MATERIALS, RESISTANCE, SILICON, SUBSTRATES

Subject Categories : Inorganic Chemistry

Distribution Statement : APPROVED FOR PUBLIC RELEASE