Accession Number : ADD013713

Title :   Ion Sensitive Photodetector.

Descriptive Note : Patent, Filed 3 Nov 86, patented 19 Jan 88,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s) : Quinlan, Kenneth P

Report Date : 19 Jan 1988

Pagination or Media Count : 5

Abstract : A photodetector using a modified gate controlled diode has therein a layer of photoactive material. Photons interacting therein cause the formation of free protons which alter the electrical characteristics of the photodetector. The change in electrical characteristics is measureable and related to the intensity of photons received.

Descriptors :   *PATENTS, *PHOTOIONIZATION, *TUNING DEVICES, *PROTONS, *GATES(CIRCUITS), *N TYPE SEMICONDUCTORS, PHOTOSENSITIVITY, IONS, BIAS

Subject Categories : Nuclear Physics & Elementary Particle Physics
      Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE