Accession Number : ADD013764
Title : Transition and Inner Transition Metal Chelate Polymers for High Energy Resist Lithography.
Descriptive Note : Patent, Filed 14 Mar 85, patented 15 Sep 87,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Archer, Ronald D ; Hardiman, Christopher J ; Grybos, Ryszard ; Chien, James C
Report Date : 15 Sep 1987
Pagination or Media Count : 11
Abstract : New transition and inner transition metal chelate polymers and method for synthesizing thereof. Such polymers are used as positive or negative resists of high sensitivity for lithographic purposes in integrated circuit chip fabrication requiring submicron resolution. The polymers when irradiated undergo scission or crosslinking events which affects their solubility in developer solvents. They are synthesized either in nonaqueous solution with subsequent removal of excess solvent or interfacially with almost instantaneous precipitation of the polymer at the interface.
Descriptors : *LITHOGRAPHY, *POLYMERS, *CHELATION, *PATENTS, CHIPS(ELECTRONICS), CROSSLINKING(CHEMISTRY), FABRICATION, HIGH ENERGY, HIGH SENSITIVITY, INTEGRATED CIRCUITS, PRECIPITATION, RESOLUTION, SOLUBILITY, TRANSITIONS
Subject Categories : Inorganic Chemistry
Distribution Statement : APPROVED FOR PUBLIC RELEASE