Accession Number : ADD013766

Title :   Radiation Hardening of MOSFET (Metal-Oxide-Semiconductor Field-Effect Device).

Descriptive Note : Patent Application, Filed 24 Feb 83,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s) : Ackermann, Mark R

Report Date : 24 Feb 1983

Pagination or Media Count : 11

Abstract : A MOSFET device which typically utilizes silicon dioxide as an insulating material and which becomes inoperative under ionizing radiation conditions can be made to significantly enhance its radiation survivability by introducing crystalline zinc sulfide as an insulating material. The invention may be manufactured as one of three variations. Crystalline zinc sulfide may replace silicon dioxide as the gate insulator, the field insulator, or both the gate and field insulators.

Descriptors :   *PATENT APPLICATIONS, *FIELD EFFECT TRANSISTORS, *METAL OXIDE SEMICONDUCTORS, *MOSFET SEMICONDUCTORS, *RADIATION HARDENING, *SILICON DIOXIDE, CRYSTALS, ELECTRICAL INSULATION, GATES(CIRCUITS), INSULATION, IONIZING RADIATION, MATERIALS, RADIATION, SURVIVABILITY

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE