Accession Number : ADD013787
Title : Apparatus for Transient Annealing of Semiconductor Samples in a Controlled Ambient.
Descriptive Note : Patent, Filed 14 May 86, patented 26 Jan 88,
Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC
Personal Author(s) : Zeisse, Carl R ; Schumacher, Edward R
Report Date : 26 Jan 1988
Pagination or Media Count : 10
Abstract : An improved apparatus for annealing an ion-implanted semiconductor sample reduces the deleterious side effects otherwise associated with the process. A semiconductor sample, fabricated, for example, from indium phosphide or gallium arsenide, is set upon the fingers of a carrier which is displaced to the interior of an elongate furnace having its internal temperature maintained at the proper annealing temperature. Next, the fingers are rotated and the sample is placed on a number of razor blade-like edges extending up from an internal rack. The carrier is withdrawn and the sample is quickly brought to the annealing temperature for the precise period of time usually no more than 20 seconds.
Descriptors : *ANNEALING, *GALLIUM ARSENIDES, *SEMICONDUCTORS, *PATENTS, FURNACES, INDIUM PHOSPHIDES, INTERNAL, ION IMPLANTATION, PRECISION, SAMPLING, STORAGE RACKS, TEMPERATURE, TIME, TRANSIENTS
Subject Categories : Inorganic Chemistry
Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE