Accession Number : ADD013828

Title :   Atomic Layer Etching.

Descriptive Note : Patent, Filed 31 Aug 87, patented 12 Jul 88,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Yoder, Max N

Report Date : 12 Jul 1988

Pagination or Media Count : 7

Abstract : This patent discloses an apparatus, and method therefor, for removing a single atomic layer from the surface of a crystalline diamond. In a preferred embodiment, the apparatus comprises: a first delivery system for flooding the surface of the diamond with a pulse of nitrogen dioxide during a first phase of operation to cause a monolayer of nitrogen oxide to be adsorbed to the surface of the diamond; and a second delivery system for impacting the surface of the diamond with a pulse of ions of mixed noble and hydrogen gases during a second phase of operation in order to remove a single atomic layer from the surface of the diamond. In a preferred method for removing a single atomic layer from the surface of a crystalline diamond, the method comprises the steps of: flooding the diamond surface with a pulse of nitrogen dioxide during the first phase of operation; and impacting the diamond surface with a pulse of ions of mixed noble and hydrogen gases during a second phase of operation in order to remove a single atomic layer from the surface of the diamond. (jhd)

Descriptors :   *ETCHING, *DIAMONDS, *PATENTS, CRYSTALS, DIOXIDES, IONS, LAYERS, MIXING, NITROGEN OXIDES, PULSES, SURFACES, ADSORPTION

Subject Categories : Test Facilities, Equipment and Methods
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE