Accession Number : ADD013877

Title :   Dual Active Layer Photoconductor.

Descriptive Note : Patent Application, Filed 29 Jun 88,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Thompson, Phillip E ; Pananicolaou, Nicholas A ; Boos, J B

Report Date : 29 Jun 1988

Pagination or Media Count : 14

Abstract : A photoconductive semiconductor device having a source, a drain, and a photosensitive channel there between. The channel has a surface layer that is highly doped with respect to the remainder of the channel, compensating at least in part for the channel's surface depletion layer. In this manner, the photosensitivity of the device is increased without disproportionately increasing wasted dark current. In a preferred embodiment, the additional doping of the channel's surface layer is done by ion implantation, and the device is a monolith formed of gallium arsenide. Patent applications. (mjm/rh)

Descriptors :   *GALLIUM ARSENIDES, *PATENT APPLICATIONS, *PHOTOCONDUCTIVITY, *PHOTOCONDUCTORS, *SEMICONDUCTOR DEVICES, CHANNELS, DARKNESS, DEPLETION, DOPING, ION IMPLANTATION, LAYERS, PHOTOSENSITIVITY, SURFACES

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE