Accession Number : ADD013987

Title :   Method for Fabricating Low Loss Crystalline Silicon Waveguides by Dielectric Implantation.

Descriptive Note : Patent, Filed 26 Mar 87, patented 6 Dec 88,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s) : Lorenzo, Joseph P ; Soref, Richard A

Report Date : 06 Dec 1988

Pagination or Media Count : 8

Abstract : A method of fabricating low loss silicon optical waveguides by high energy ion implantation which converts a buried region into dielectric material. The top silicon surface can them be etched or formed into waveguides that are isolated by the buried dielectric. Annealing of the top silicon layer can be used to improve optical quality and additional silicon can be added to the top surface waveguides by epitaxial growth. Patents. (rh)

Descriptors :   *ANNEALING, *DIELECTRICS, *EPITAXIAL GROWTH, *ION IMPLANTATION, *PATENTS, *SILICON, *WAVEGUIDES, BURIED OBJECTS, HIGH ENERGY, IMPLANTATION, LAYERS, MATERIALS, OPTICAL PROPERTIES, REGIONS, SURFACES

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE