Accession Number : ADD013989

Title :   Ion-Sensitive Photodetector.

Descriptive Note : Patent, Filed 1 Dec 86, patented 20 Dec 88,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s) : Quinlan, Kenneth P

Report Date : 20 Dec 1988

Pagination or Media Count : 5

Abstract : A photodetector using a modified ion-sensitive field effect transistor has therein a layer of photoactive material. Upon exposure to a beam of light the photoactive material produces a charge-separation (with proton movement) therein which affects the drain current. The change in gate voltage to stabilizes the drain current is a measure of the intensity of the light input. Patents. (rh)

Descriptors :   *GATES(CIRCUITS), DRAINAGE, INPUT, LIGHT, PATENTS, PHOTODETECTORS, PROTONS, VOLTAGE

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE