Accession Number : ADD014010

Title :   Method and Apparatus for Synthesizing a Single Crystal of Indium Phosphide.

Descriptive Note : Patent, filed 8 Oct 86, patented 16 Aug 88,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s) : Adamski, Joseph A

Report Date : 16 Aug 1988

Pagination or Media Count : 5

Abstract : A method for synthesizing and growing a single crystal of indium phosphide includes vacuum baking and purifying of elemental indium prior to reacting it with red phosphorus within the same apparatus. The steps growth take place in a vertical apparatus by placing the reaction components within a reaction vessel that is sealed under vacuum after the purification and then heated and cooled within predetermined temperature limits to react indium with red phosphorus to synthesize molten indium phosphide and a single crystal of indium phosphide by cooling the molten indium phosphide with a controlled temperature atmosphere. Excess phosphorus is maintained during growth to eliminate the need for encapsulation of the growth melt. Patents. (MJM)

Descriptors :   *INDIUM PHOSPHIDES, *PATENTS, *SINGLE CRYSTALS, *SYNTHESIS, CONTROLLED ATMOSPHERES, COOLING, ENCAPSULATION, GROWTH(GENERAL), INDIUM, LIMITATIONS, MELTS, PHOSPHORUS, PURIFICATION, RED(COLOR), RESPONSE, TEMPERATURE, TEMPERATURE CONTROL, VACUUM, VERTICAL ORIENTATION

Subject Categories : Inorganic Chemistry

Distribution Statement : APPROVED FOR PUBLIC RELEASE