Accession Number : ADD014124

Title :   Radiation-Induced Substrate Photo-Current Compensation Apparatus.

Descriptive Note : Patent Application, Filed 21 Mar 88,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s) : Hughes, Arlen J

Report Date : 21 Mar 1988

Pagination or Media Count : 19

Abstract : A radiation-induced substrate photo-current compensation apparatus for a silicon FET on a sapphire substrate having an additional pair of electrodes on the substrate in a precise geometrical relationship to the source and drain electrodes to provide a compensating substrate current which flows into the source and drain electrodes, eliminating the undesirable effects of radiation on the semiconductor. Patent applications. (rh)

Descriptors :   *FIELD EFFECT TRANSISTORS, *PATENT APPLICATIONS, *RADIATION, *SAPPHIRE, *SEMICONDUCTORS, *SILICON, *SUBSTRATES, COMPENSATION, DRAINAGE, ELECTRODES, GEOMETRY, PRECISION

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE