Accession Number : ADD014132

Title :   A TiW Diffusion Barrier for AuZn Ohmic Contacts to P-Type InP.

Descriptive Note : Patent, Filed 17 Jun 88, patented 28 Mar 89,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Boos, John B ; Papanicolaou, Nicolas A ; Weng, Tung H

Report Date : 28 Mar 1989

Pagination or Media Count : 9

Abstract : A low metal resistance ohmic contact alloyed to p InP material having TiW within the contact as a diffusion barrier layer between an underlay of AuZn and an over lay of Au. A process for fabricating an InP JFET containing a gate contact of respective AuZn, TiW, and Au layers and with the gate contact alloyed to p InP material of a semiconductive gate region provides an improved InP JFET having a low resistance metal alloyed ohmic contact to the gate region. Use of the TiW layer in a multilayer contact alloyed to p InP material leads to unique processing and improved InP semiconductor devices. Patents. (rh)

Descriptors :   *ELECTRIC CONTACTS, *GATES(CIRCUITS), *P TYPE SEMICONDUCTORS, *PATENTS, *RESISTANCE, *SEMICONDUCTOR DEVICES, BARRIERS, DIFFUSION, LAYERS, METALS, REGIONS, SEMICONDUCTORS

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE