Accession Number : ADD014177

Title :   Niobium and Niobium Nitride Contacts on Semiconducting Material.

Descriptive Note : Patent Application, Filed 30 Jun 89,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Cukauskas, Edward ; Carter, William ; Pond, Jeffrey ; Newman, Harvey

Report Date : 30 Jun 1989

Pagination or Media Count : 19

Abstract : This invention related generally to a metallization layer of niobium or niobium nitride on a semiconductor in an integrated circuit structure which can function from the superconducting temperature regime to above room temperature. Niobium or niobium nitride is deposited onto a heated gallium arsenide substrate. This metallization will maintain chemical stability after high temperature post processing. These materials provide a low resistivity metallization suitable for Schottky contacts used over a wide operating temperature range and are superconducting at low temperatures. Keywords: Patent applications; Thin films; Super conducting semiconductors. (AW)

Descriptors :   *GALLIUM ARSENIDES, *INTEGRATED CIRCUITS, *NIOBIUM, *NITRIDES, *PATENT APPLICATIONS, *SEMICONDUCTORS, *ELECTRIC CONTACTS, CHEMICALS, HEAT, HIGH TEMPERATURE, LAYERS, LOW TEMPERATURE, MATERIALS, METALLIZING, NIOBIUM COMPOUNDS, PROCESSING, RANGE(EXTREMES), ELECTRICAL RESISTANCE, ROOM TEMPERATURE, STABILITY, SUBSTRATES, SUPERCONDUCTIVITY, SUPERCONDUCTORS, TEMPERATURE, THIN FILMS, SCHOTTKY BARRIER DEVICES

Subject Categories : Solid State Physics
      Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE