Accession Number : ADD014230

Title :   Fabrication of NBN Based Electronic Devices with Silicon Barriers.

Descriptive Note : Patent Application, Filed 30 Jun 89,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Cukauskas, Edward ; Carter, William

Report Date : 30 Jun 1989

Pagination or Media Count : 12

Abstract : A method of making a Josephson Junction is disclosed which includes the steps of depositing a base electrode layer of a refractory superconducting material on a substrate, depositing a first a passivation layer on the base electrode, depositing a barrier layer of refractory insulating semiconducting material on the passivation layer, depositing a second passivation layer on the barrier layer, and depositing a counter electrode on the second passivation layer. The layers are deposited at a substrate temperature of from about 5 C to about 7 C in an Ultra-High Vacuum sputtering system at a base pressure of less than or equal to 5 x 10 to the 8th power Torr. In the preferred embodiment a base electrode and counter electrode of NbN are separated by a barrier layer of hydrogenated silicon. When exposed to high post processing temperatures this structure maintains a chemically stable interface with the substrate. Keywords: Patent applications. (RH)

Descriptors :   *BARRIERS, *JOSEPHSON JUNCTIONS, *PATENT APPLICATIONS, *SEMICONDUCTORS, *SILICON, BASE PRESSURE, CHEMICAL PROPERTIES, ELECTRODES, ELECTRONIC EQUIPMENT, HIGH TEMPERATURE, INSULATION, INTERFACES, LAYERS, PASSIVITY, PROCESSING, REFRACTORY MATERIALS, SPUTTERING, STABILITY, SUBSTRATES, SUPERCONDUCTORS, TEMPERATURE, ULTRAHIGH VACUUM

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE