Accession Number : ADD014232

Title :   Multiband Photoconductive Detector Based on Layered Semiconductor Quantum Wells.

Descriptive Note : Patent Application, Filed 29 Jun 89,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Bishop, Stephen G ; Shanabrook, Benjamin V

Report Date : 29 Jun 1989

Pagination or Media Count : 20

Abstract : A multiband photoconductive detector and method for simultaneously and separately detecting and distinguishing light or radiation from a large number of different wavelength bands is disclosed. The multiband photoconductive detector comprises a plurality of low energy gap semiconductor layers of preselected progressively decreasing thicknesses of a first material, a plurality of high energy gap semiconductor layers of a second material interleaved with the plurality of low energy gap semiconductor layers, and a plurality of pairs of electrical contacts respectively applied to the plurality of low energy gap semiconductor layers and adapted to respectively receive associated bias voltages to enable the plurality of low energy gap semiconductor layers to constitute a corresponding plurality of separate photoconductive detectors with a preselected plurality of different wavelength bands. Keywords: Patent applications. (JHD)

Descriptors :   *PATENT APPLICATIONS, *PHOTODETECTORS, *QUANTUM ELECTRONICS, BIAS, ELECTRIC CONTACTS, FREQUENCY BANDS, LAYERS, PHOTOCONDUCTIVITY, SEMICONDUCTORS, THICKNESS, VOLTAGE

Subject Categories : Optical Detection and Detectors
      Electrooptical and Optoelectronic Devices

Distribution Statement : APPROVED FOR PUBLIC RELEASE