Accession Number : ADD014263

Title :   Reflection Technique for Thermal Mapping of Semiconductors.

Descriptive Note : Patent, Filed 28 Dec 87, patented 20 Jun 89,

Corporate Author : DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s) : Walter, Martin J

Report Date : 20 Jun 1989

Pagination or Media Count : 6

Abstract : Semiconductors may be optically tested for their temperatures by illuminating them with tunable monochromatic electromagnetic radiation and observing the light reflected off of them. A transition point will occur when the wavelength of the light corresponds with the actual band gap energy of the semiconductor. At the transition point, the image of the semiconductor will appreciably darken as the light is transmitted through it, rather than being reflected off of it. The wavelength of the light at the transition point corresponds to the actual band gap energy and the actual temperature of the semiconductor. Patents. (RRH)

Descriptors :   *IMAGES, *MAPPING, *MONOCHROMATIC LIGHT, *PATENTS, *SEMICONDUCTORS, *TEMPERATURE, *TUNING, ELECTROMAGNETIC RADIATION, FREQUENCY, LIGHT, REFLECTION, THERMAL PROPERTIES, TRANSITIONS

Subject Categories : Test Facilities, Equipment and Methods
      Solid State Physics
      Thermodynamics

Distribution Statement : APPROVED FOR PUBLIC RELEASE