Accession Number : ADD014321

Title :   Passivating Layer for III-V Semiconductor Materials.

Descriptive Note : Patent, Filed 30 Mar 88, patented 9 May 89,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Jonker, Berend T ; Prinz, Gary A ; Krebs, James J

Report Date : 09 May 1989

Pagination or Media Count : 5

Abstract : This invention relates to a semiconductor structure in which an epitaxial semiconductor layer is used to electrically passivate and insulate the semiconductor on which it is deposited. In today's world, developments in electronic devices demand faster and faster reaction speed. We have found that the Zinc Selenide binary semiconductors and alloys of this invention having the general formula Zn(1-x-y)M(x)Q(y)Se:D provide a suitable passivating layer for III-V semiconductor materials which sufficiently minimizes surface state density, surface charge accumulation or charge carrier recombination to significantly improve practical electronic device operation. PAT-CL-428-642. (jes)

Descriptors :   *CHARGE CARRIERS, *EPITAXIAL GROWTH, *GROUP III COMPOUNDS, *GROUP V COMPOUNDS, *SEMICONDUCTORS, *PATENTS, ACCUMULATION, ALLOYS, DENSITY, ELECTRONIC EQUIPMENT, LAYERS, MATERIALS, OPERATION, STATIC ELECTRICITY, SURFACE PROPERTIES

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE