Accession Number : ADD014386

Title :   Three-Mirror Active-Passive Semiconductor Laser.

Descriptive Note : Patent, Filed 7 Jun 82, patented 11 Dec 84,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Garmire, Elsa M ; Evans, Gary A ; Niesen, W

Report Date : 11 Dec 1984

Pagination or Media Count : 8

Abstract : Disclosed is a GaA1As laser diode wherein an abrupt etch step in the waveguide layer forms a third mirror. The structure is a large optical cavity double heterostructure laser having a relatively long active cavity and a relatively short passive cavity. Output is temperature and current sensitive for single mode operation, widely spaced dual mode operation, and narrow-band multimode operation. Keywords: Patents, PAT-CL-372-50. (KR)

Descriptors :   *SEMICONDUCTOR LASERS, *PATENTS, CAVITIES, MIRRORS, MULTIMODE, NARROWBAND, OPERATION, PASSIVE SYSTEMS, SHORT RANGE(TIME)

Subject Categories : Lasers and Masers

Distribution Statement : APPROVED FOR PUBLIC RELEASE