Accession Number : ADD014410

Title :   Sensitized Epitaxial Infrared Detector.

Descriptive Note : Patent, Filed 17 Mar 82, patented 10 Apr 84,

Corporate Author : DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s) : Bouley, Alan C ; Riedl, Harold R ; Jensen, James D ; Jost, Steven R

Report Date : 10 Apr 1984

Pagination or Media Count : 4

Abstract : An infrared sensitive photodiode which is made of an epitaxial layer of a semiconductor alloy which is a lead chalcogenide, a lead-tin chalcogenide, or a lead-cadmium chalcogenide grown on single crystal substrate of an infrared transparent, electrically insulating material, on Ohmic contact deposited on the epitaxial layer, and an non-Ohmic Pb metal contact deposited on the epitaxial layer to form a Schottky barrier, the improvement comprising the inclusion of halide ions in the interface region between the non-Ohmic lead metal contact and the epitaxial layer of semiconductor material. Keywords: Patents, PAT-CL-357-30. (KR)

Descriptors :   *INFRARED DETECTORS, *PATENTS, ALLOYS, CADMIUM ALLOYS, CHALCOGENS, ELECTRIC CONTACTS, EPITAXIAL GROWTH, HALIDES, INFRARED RADIATION, INTERFACES, IONS, LAYERS, LEAD ALLOYS, LEAD COMPOUNDS, MATERIALS, METAL CONTACTS, PHOTODIODES, REGIONS, SCHOTTKY BARRIER DEVICES, SEMICONDUCTORS, SENSITIVITY, SENSITIZING, SINGLE CRYSTALS, SUBSTRATES, TIN COMPOUNDS

Subject Categories : Infrared Detection and Detectors

Distribution Statement : APPROVED FOR PUBLIC RELEASE